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| 2N4401 NPN Silicon General Purpose Transistors TO-92 FEATURES Power dissipation PCM : 0.625 W Tmb=25ae(c) a Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T J T stg: -55ae to +150ae 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage unless Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 VCE(sat) VBE(sat) otherwise Test specified(c) MIN 60 40 6 0.1 0.1 0.1 100 300 0.4 0.95 V V MAX UNIT V V V |I A |I A |I A conditions Ic=100|I , IE=0 A IC= 1mA , IE=100|I A, IB=0 IC=0 VCB=50 V , IE=0 VCE=35 V , IB=0 VEB=5V , IC=0 VCE=1 V, IC= 150m A IC=150 mA, IB=15m A IC= 150 mA, IB=15m A VCE= 10V, IC= 20mA Transition frequency f T 250 MHz f = 100MHz WEITRON http://www.weitron.com.tw 2N4401 WEITRON http://www.weitron.com.tw 2N4401 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L H TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A |
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